CMLSH-4DO
SURFACE MOUNT SILICON
DUAL, ISOLATED OPPOSING
SCHOTTKY DIODE
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLSH-4DO are
two individual electrically isolated 40 volt Schottky
diodes of opposing polarity, in a space saving
SOT-563 surface mount package. This device has
been designed for applications requiring fast switching
speeds and a low forward voltage drop.
MARKING CODE: L4O
SOT-563 CASE
MAXIMUM RATINGS: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=10ms
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VRRM
40
UNITS
V
IF
200
mA
IFRM
IFSM
350
mA
750
mA
PD
TJ, Tstg
250
mW
-65 to +150
°C
ΘJA
500
°C/W
ELECTRICAL
SYMBOL
IR
IR
CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
TYP
MAX
VR=25V
90
500
VR=25V, TA=100°C
25
100
BVR
IR=100μA
VF
IF=2.0mA
0.29
0.33
V
VF
IF=15mA
IF=100mA
0.37
0.42
V
0.51
0.80
V
IF=200mA
0.65
1.0
CJ
VR=1.0V, f=1.0MHz
7.0
trr
IF=IR=10mA, Irr=1.0mA, RL=100Ω
VF
VF
40
50
UNITS
nA
μA
V
V
pF
5.0
ns
R6 (16-February 2016)
CMLSH-4DO
SURFACE MOUNT SILICON
DUAL, ISOLATED OPPOSING
SCHOTTKY DIODE
SOT-563 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Anode D1
2) NC
3) Cathode D2
4) Anode D2
5) NC
6) Cathode D1
MARKING CODE: L4O
R6 (16-February 2016)
w w w. c e n t r a l s e m i . c o m
CMLSH-4DO
SURFACE MOUNT SILICON
DUAL, ISOLATED OPPOSING
SCHOTTKY DIODE
TYPICAL ELECTRICAL CHARACTERISTICS
R6 (16-February 2016)
w w w. c e n t r a l s e m i . c o m
CMLSH-4DO
SURFACE MOUNT SILICON
DUAL, ISOLATED OPPOSING
SCHOTTKY DIODE
TYPICAL ELECTRICAL CHARACTERISTICS
R6 (16-February 2016)
w w w. c e n t r a l s e m i . c o m
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REQUESTING PRODUCT PLATING
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ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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